搜索结果: 1-12 共查到“物理学 Temperature Dependence”相关记录12条 . 查询时间(0.062 秒)
Millimeter-wave study of London penetration depth temperature dependence in Ba(Fe0.926Co0.074)2As2 single crystal
Instrumentation and Detectors depth, temperature dependence.
2011/9/29
In-plane surface Ka-band microwave impedance of optimally doped single crystals of the Fe-based superconductor Ba(Fe0.926Co0.074)2As2 (Tc= 22.8K) was measured. Sensitive sapphire disk quasi-optical re...
Doping and temperature dependence of Mn 3d states in A-site ordered manganites
Doping temperature dependence A-site ordered manganites
2010/11/19
We present a systematic study of the electronic structure in A-site ordered manganites as function of doping and temperature. The energy dependencies observed with soft x-ray resonant diffraction (SXR...
Phase stability and structural temperature dependence in sodium niobate: A high resolution powder neutron diffraction study
Phase stability structural temperature dependence high resolution powder neutron diffraction
2010/11/24
We report investigation of structural phase transitions in technologically important material sodium niobate as a function of temperature on heating over 300-1075 K. Our high resolution powder neutron...
Comment on "Temperature dependence of the Casimir force for lossy bulk media"
Temperature dependence Casimir force lossy bulk media
2010/10/29
Recently Yampol'skii et al. [Phys. Rev. A v.82, 032511 (2010)] advocated that Lifshitz theory is not applicable when the characteristic wavelength of the fluctuating electromagnetic field, responsible...
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Non-linear behavior of Eg(T) Zero-point energy Temperature dependence of the gap Gallium arsenide
2010/6/30
In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigati...
Temperature Dependence of Exchange Bias and Coercivity in Ferromagnetic
Layer Coupled with Polycrystalline Antiferromagnetic Layer
ferromaagnetic layer
antiferromagnetic layer
2007/8/15
2004Vol.41No.4pp.623-628DOI:
Temperature Dependence of Exchange Bias and Coercivity in Ferromagnetic
Layer Coupled with Polycrystalline Antiferromagnetic Layer
ZHAO Jin-Wei,1,3 HU...
期刊信息
篇名
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
语种
英文
撰写或编译
撰写
作者
Z. Y. Zhang*,C. L. Yang,Y. Q. Wei,X ....
Thermal Expansion Contribution to the Temperature Dependence of Excitonic Transitions in GaAs and AlGaAs
Thermal Expansion the Temperature Dependence Excitonic Transitions GaAs and AlGaAs
2010/10/21
Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the ...
The Temperature Dependence of the Electronic Structure of Si d-doped GaAs
d-doped GaAs electronic structure temperature-dependence
2010/4/13
We investigated theoretically the change of electronic properties of Si d-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuni...
The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiNx Films
A. Dark Conductivity B. Activation energy C. Pre-exponential factor D. Hydrogenated amorphous silicon nitride
2010/4/15
Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3 . The dark conductivity (sd) of...
Temperature Dependence of Galvanomagnetic Properties for Lightly Doped N-Type Si
Temperature Dependence Galvanomagnetic Properties Lightly Doped N-Type Si
2010/4/13
The temperature dependence of Hall and magnetoresistance effects in n-type Si having a resistivity of 1400 {W } cm at room temperature is studied in the temperature range of 210-320 K. The variation o...
Temperature Dependence of Vickers Microhardness and Creep Study of Inx Bi2-x Te3 Crystals
Vickers Microhardness Creep Study Inx Bi2-x Te3 Crystals
2010/4/15
Temperature dependence of Vickers microhardness of lnx Bi2-x Te3 single crystals with x ranging from 0.1 to 0.5 has been studied. Loading time dependence of microhardness at different temperatures has...