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Temperature Dependence of Exchange Bias and Coercivity in Ferromagnetic
Layer Coupled with Polycrystalline Antiferromagnetic Layer
ferromaagnetic layer
antiferromagnetic layer
2007/8/15
2004Vol.41No.4pp.623-628DOI:
Temperature Dependence of Exchange Bias and Coercivity in Ferromagnetic
Layer Coupled with Polycrystalline Antiferromagnetic Layer
ZHAO Jin-Wei,1,3 HU...
期刊信息
篇名
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
语种
英文
撰写或编译
撰写
作者
Z. Y. Zhang*,C. L. Yang,Y. Q. Wei,X ....
Thermal Expansion Contribution to the Temperature Dependence of Excitonic Transitions in GaAs and AlGaAs
Thermal Expansion the Temperature Dependence Excitonic Transitions GaAs and AlGaAs
2010/10/21
Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the ...