搜索结果: 1-4 共查到“半导体物理学 Ga”相关记录4条 . 查询时间(0.176 秒)
2013年7月9日，《物理评论快报》 (Phys. Rev. Lett.111, 027203 2013)报道了中科院半导体研究所半导体超晶格国家重点实验室赵建华研究组及合作者在(Ga,Mn)As/Co2FeAl双层膜铁磁界面耦合和磁邻近效应方面取得的最新研究成果。
用赝势微扰法计算某些半导体的能带结构(用于GaAs,GaP和Ga[As1-xPx]合金)
2007/12/12
用赝势微扰法计算了GaAs,GaP和Ga[As1-xPx]合金的能带。赝势选择的原则是使计算所得直接能隙和间接能隙与实验值相符合。计算结果表明,不但能带次序准确,而且与室温下的实验值符合得很好。基于由GaAs到GaP晶格常数和赝势是线性变化的假设,计算了GaP含量为20％,50％和80％时Ga[As1-xPx]合金的能带。当GaP含量为41％时,直接能隙和间接能隙相等,这一数值刚好是Spitzer...
Effects of Disorder on the Exchange Coupling in (Ga,Mn)As Diluted Magnetic Semiconductors
Disorder Exchange coupling Diluted magnetic semiconductors
2010/8/26
A theoretical study of the effects of disorder on the Mn-Mn exchange interactions for Ga1¡xMnxAs diluted magnetic semiconductors is presented. The disorder is intrinsically considered in the cal...
Doping Effects of Ga And Te On The Kinetic Coefficients of Rhombohedral And Cubic Phases Of Ge1-x Gax Te Solid Solution Alloys
Doping Effects Ga Te Ge1-x Gax Te Solid Solution Alloys
2010/4/16
this study Ga and Te doping effects on the kinetic parameters (thermo e.m.f., electrical conductivity, heat conductivity, Hall and Nernst-Ettingshausen coefficients) of the rhombohedral and cubic phas...