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西安电子科技大学电子工程学院模拟电子线路英文课件Chapter6 Field-Effect Transistor
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter6 Field-Effect Transistor
2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter6 Field-Effect Transistor。
Temperature dependence of frequency response characteristics in organic field-effect transistors
MIS capacitors frequency response organic compounds organic field effect transistors 8432Tt 8530Tv
2016/12/2
The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characte...
Field-effect detection using phospholipid membranes
Field-effect detection ing phospholipid membranes
2010/10/12
The application of field-effect devices to biosensors has become an area of intense research interest. An attractive feature of field-effect sensing is that the binding or reaction of biomolecules can...
Laser flash photolysis and magnetic-field-effect studies on interaction of thymine and thymidine with menadione: role of sugar in controlling reaction pattern
menadione thymine thymidine laser flash photolysis magnetic field effect
2010/10/12
The magnetic field effect (MFE) in conjunction with laser flash photolysis has been used for
the study of the interaction of one of the small drug like quinone molecules, 2-methyl,
1,4-naphthoquinon...
A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an a...
Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
Hot-carrier-injection Stress time Drain current Transconductance MOSFET
2010/12/8
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects gener...
GaN Metal-insulator-semiconductor Field Effect Transistor Based on GaN/AlGaN/GaN Double Heterojunctions
GaN Metal-insulator-semiconductor Field EffectTransistorBased GaN/AlGaN/GaN Heterojunctions
2010/7/15
III-N is the most promising material for high-temperature, high-power electronic devices.
There have been many researches on GaN-based metal semiconductor FET (MESFETs). For many
applications, metal...
Three-Dimensional Modelling and Simulation Theory of Field Effect Devices
Modelling simulation FET
2010/12/9
A new, completely numerical three-dimensional model of a MOSFET allows a unified treatment of small devices. Preliminary results show that device size effects the surface potential and threshold volta...
Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers
Loss power density tunneling current MOS cell oxide thickness
2010/12/10
The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related...
Surface Recombination Via Interface Defects in Field Effect Transistors
Recombination current oxide semiconductor energy level
2010/12/10
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependen...