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搜索结果: 1-11 共查到工学 Silicon carbide相关记录11条 . 查询时间(0.062 秒)
The 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) is the premier biennial meeting covering all aspects of the latest SiC research and development. Scientists, en...
A novel silicon carbide (SiC)-strengthened magnetorheological elastomers (MREs) was developed to enhance its viscoelastic performance. The influences of the size and weight content of the SiC particle...
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
A novel method was developed to enhance the cyclic performance of magnetorheological elastomers (MREs) by incorporating silicon carbide (SiC) nanoparticles. Different amounts of SiC nanoparticles were...
Here, we show analytically that the thermal rectification via evanescent waves is obtained in the parallel semi-innite bodies of the dielectric-coated silicon carbide and uncoated silico...
Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material’s mechanical properties. Currently there lacks a unified physical model cap...
Purpose: . The aim of this work was to improve the surface layer cast magnesium cast alloys by laser surface treatment and determine the laser treatment parameters. Design/methodology/approach: The l...
The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wid...
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc = 1.5 K....
专著信息 书名 Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide 语种 英文 撰写或编译 作者 C. H. Lam,T. W. Lam,C. C. Ling,S. Fung,C. D. Beling,Hang De-Sheng and Weng Huimin 第一作者单位 出版社 J.P...
A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed.

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