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The metallurgical states of rare earth-transition metal targets were found to be essential to produce high performance magneto-optical recording thin films.Our study indicates that in a vertical in-li...
An alternate approach to the preparation of transfer-free graphitic carbon films is proposed in this paper. Using a standard radio-frequency sputtering system and a high-temperature annealing procedur...
氩氢体积比对磁控溅射制备AlxOy/PET阻隔膜的影响（Characterization of AlxOy Barrier Films on PET Substrate Prepared by Magnetron Sputtering）
AlxOy/ PET 磁控溅射 阻隔性 力学性能
2010/12/28
采用直流电源，以纯铝为靶，氧气为反应气体，高纯氩气为溅射气体磁控溅射在PET基底上制备高阻隔性AlxOy/PET包装薄膜，并研究不同氩氢体积比对AlxOy薄膜形貌、成分、结构的影响，讨论了镀AlxOy膜后DET力学性能与阻隔性能的变化。FTIR与XPS研究分析表明，反应氧气量直接影响AlxOy薄膜的化学结构，薄膜的红外光谱的峰值、强度和带宽等变化规律均与氧气量有关，并且AlxOy中氧原子的含量...
Structural, electrical and optical properties of AZO/SiO2/p-Si SIS heterojunction prepared by magnetron sputtering
Al-doped ZnO sputtering SIS heterojunction current–voltage (I–V ) characteristics
2011/5/6
ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type
texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si
heterojunction, a...
Study of structural and optical properties of TiO2:Tb thin films prepared by high energy reactive magnetron sputtering method
TiO2 magnetron sputtering Tb
2011/5/11
This work is focused on structural and optical properties of TiO2 thin films doped with different amount of terbium. The thin films have been prepared by high energy reactive magnetron sputtering (HE ...
Properties of AlNx thin films prepared by DC reactive magnetron sputtering
aluminum nitride (AlN) thin films
2011/5/10
In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnet...
Application of Cathode Sputtering for Obtaining Ultra-Thin Metallic Coatings on Textile Products
electromagnetic fields screening textiles metallic coatings cathode sputtering
2009/2/12
The need to protect rooms in which people work and sensitive electronic equipment operates against the negative influence of electromagnetic fields (EMF) requires us to search for better and better sc...
Stable superhydrophobic surface: fabrication of interstitial cottonlike structure of copper nanocrystals by magnetron sputtering
superhydrophobic copper film magnetron sputtering nanostructure wettability
2010/10/12
A stable superhydrophobic copper surface was obtained by radio-frequency magnetic
sputtering on Si (100) and quartz substrates. The water contact angle and sliding angle of the
superhydrophobic copp...
Electrical resistivity of copper oxide thin films prepared by reactive magnetron sputtering
Electrical properties Magnetron sputtering Thin films
2010/2/10
Purpose: Investigation the effect of varying r.f. power and oxygen flow rates during deposition on the electrical properties of copper oxide thin films prepared by reactive magnetron sputtering Design...
Optical emission from Eu, Tb, Nd luminescence centers in TiO2 prepared by magnetron sputtering
luminescence rare earth elements
2011/5/4
This work presents the results of optical emission from Eu3+, Tb3+ and Nd3+ luminescence centers in TiO2 thin films. Thin films were prepared by magnetron sputtering from metallic Ti-Eu, Ti-Tb, Ti-Nd ...
Influence of Eu dopant on optical properties of TiO2 thin films fabricated by low pressure hot target reactive sputtering
titanium oxide europium
2011/5/4
This work presents the influence of europium dopant on optical properties of TiO2:Eu3+ thin films fabricated by low pressure hot target reactive sputtering. Thin films were deposited from metallic Ti-...
Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets
SnO2 F Thin Films R.F Various Targets
2010/12/16
Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2...
High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
d.c. reactive ion an argon atmosphere oxygen partial pressures
2010/12/21
Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the t...
Reproducibility of Properties of SnOx Thin Films Prepared by Reactive Sputtering
SnOx Thin Films Reactive Sputtering substrate temperature
2010/12/23
The preparation of tin dioxide films by low energy reactive sputtering of tin and tin-antimony (1-10% wt. Sb) in an oxygen – argon atmosphere is described. The dependences of oxygen content in the ran...
Properties of Nickel Films Prepared by R.F. Sputtering and Interdiffusion Analysis of Ta2N–Ni Films
Nickel Films R.F. Sputtering Ta2N–Ni Films
2011/1/21
Ni film deposition by r.f. sputtering and etching conditions have been investigated. The contact resistance and adhesion of this Ni layer deposited directly onto Ta2N films have also been studied in a...