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Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer
Doped GaAs Self-Consistently The Intersubband Absorption
2013/1/30
We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solvin...
Enhancement of Data Transfer Rate of Phase Change Optical Disk by Doping Nitrogen in Ge–In–Sb–Te Recording Layer
Ge–In–Sb–Te recording material data transfer rate recrystallization speed nitrogen doping
2011/11/25
This work investigated the enhancement of the data transfer rate and/or recrystallization speed of Ge–In–Sb–Te recording material by nitrogen doping. The effects of nitrogen content on the dynamic pro...
Enhancing the Overwriting Characteristics of Phase-Change Optical Disks by Doping in Dielectric Layers
overwriting characteristics cycleability phase-change optical disk doping dielectric layer
2011/11/25
In this work, we studied the enhancement of overwriting characteristics of phase-change optical disks by doping in the dielectric layers. The doping elements included chromium (Cr), molybdenum (Mo), n...
The nitrogen doping effect on the properties of Ge–In–Sb–Te phase-change recording media investigated by blue-light laser
Ge– In–Sb–Te phase-change recording media Nitrogen doping Recrystallization speed Microstructure
2011/11/25
This work investigates the thermal, optical and recrystallization properties as well as the microstructure of nitrogen-doped Ge–In–Sb–Te (GIST) phase-change material when irradiated by blue-light lase...
Sectioned Core Doping Effect on Higher-Order Mode Amplification in Yb-Doped Rod-Type Photonic Crystal Fibers
Sectioned Core Doping Effect Higher-Order Mode Amplification Yb-Doped Rod-Type Photonic Crystal Fibers
2015/7/16
The amplification properties of guided modes in Yb-doped rod-type photonic crystal fibers with sectioned core doping have been investigated, evaluating the doped-area radius which provides the effecti...
Study of the pulsed laser vapor doping of the Si (100) with KrF excimer laser and BCl3 gas
2007/7/28
期刊信息
篇名
Study of the pulsed laser vapor doping of the Si (100) with KrF excimer laser and BCl3 gas
语种
中文
撰写或编译
撰写
作者
Wei Lin Shi,Xiying Ma
第一作者单位
绍兴文理学院
刊物名称
Applied Surface Science
页面
Vol. 230, 44–49...
Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer
quantum well contactless electroreflectance built-in electric field delta-doping
2011/4/27
In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of ...