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Operating characteristics of utility interactive inverters used in photovoltaic systems
Grid connection inverter photovoltaic power generation power electronics topologies semiconductor devices
2014/12/31
The fundamental operating characteristics of the utility interactive, or grid connected, inverter is explored. The foundation of photovoltaic and power electronics is established, along with the conce...
Determining wave propagation characteristics of MV XLPE power cable using time domain reflectometry technique
Cross-linked polyethylene distribution power cables time domain reflectometry propagation constant attenuation constant phase constant propagation velocity
2011/3/22
In this paper, the wave propagation characteristics of single-phase medium voltage (MV) cross-linked polyethylene (XLPE) power cable are determined using time domain reflectometry (TDR) measurement te...
Analysis of frequency characteristics of electrical arcs on the insulating sheath of the ADSS fiber optic cables
ADSS cable dry-band arcing frequency spectrum ageing process
2011/3/22
The insulating outer-sheath of ADSS (All dielectric self supporting) cables used on high voltage transmission lines are often subjected to various environmental effects. The ageing process of cable sh...
Characteristics of ZnO Layers Grown on GaN Template Under Argon Pressure by Pulsed Laser Deposition
ZnO Pulsed Laser Deposition Buffer layer Annealing
2009/6/1
We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were anneale...
专著信息
书名
SiCGe/SiC Heterojunction and Its MEDICI Simulation of Optoelectronic Characteristics
语种
英文
撰写或编译
作者
吕 政,陈治明,蒲红斌
第一作者单位
出版社
Chinese Physics, 2004年底审稿通过,已录用待发表
出版地
出版日期
2004年
月
日
标准书号
介质类型
页数
字...
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...
Modification of n-Si Characteristics by Annealing and Cooling at Different Rates
n-Si Annealing Cooling rate J–V plots SEM
2010/12/7
The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The...
Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics
Effect of Annealing n-GaAs Electrode Photoelectrochemical Characteristics
2010/12/7
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by a...
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2010/12/7
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
Hot-carrier-injection Stress time Drain current Transconductance MOSFET
2010/12/8
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects gener...
Biaxial Strain Effects on Optical Characteristics of Quantum Well Lasers
Biaxial strain Lattice mismatch Refractive index Tensile strain
2010/12/8
The optical gain and refractive index change of a biaxially stressed quantum well lasers are studied theoretically using the multiband effective mass equation (i.e., k→⋅p→ method), deformation p...
Design of an Indegenised Negative Resistance Characteristics Curve Tracer
Curve tracer Negative resistance V-I characteristics plotter Negative resistance phenomenon Tracing circuitry
2010/12/8
“Negative Resistance” exhibited by a device during some portion of its V-I characteristics produces jump phenomenon, hysteresis and oscillation in the tracing circuitry. A method is presented to overc...
DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
NERFET MBE NDR a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor
2010/12/10
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resis...
Dynamic Characteristics of A Photoconducting-Electroluminescent Optoelectronic System with Optical Feedback
A Photoconducting-Electroluminescent Optoelectronic System Optical Feedback
2010/12/10
Thin film systems with photoconducting (PC) and electroluminescent (EL)
elements can be divided into three groups. The first group comprises systems
without feedback, the second, systems in which an...