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DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
NERFET MBE NDR a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor
2010/12/10
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resis...
Analysis and Modeling of Depletion-Mode MOS Transistors
Depletion-Mode MOS Transistors mode MOSFET
2010/12/13
Masuhara et. al (1972) developed a model for analysis of this device as an enhancement mode MOSFET. The model was adequate for analysis of lightly-doped, shallow-implanted channels. Subsequently, a mo...
Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors
Noise Model Determination Double Polysilicon Self-Aligned Bipolar Transistors
2010/12/14
In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters ...