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10-Gb/s - 80-km operation of full C-band InP MZ modulator with linear-accelerator-type tiny in-line centipede electrode structure directly driven by logic IC of 90-nm CMOS process
Waveguide modulators Traveling-wave devices
2015/5/21
InP MZ modulator of sub 1-V pp driving voltage with quasi-traveling-wave electrode structure and Logic IC of 90-nm CMOS process as its driver were developed. Their applicability was demonstrated throu...
Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 μm CMOS Process
Avalanche Photodiodes Fabricated CMOS Process
2015/7/17
A Si APD was fabricated by standard 0.18 μ m CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process
High-Speed Near Infrared Optical Receivers Ge Waveguide Photodetectors Integrated CMOS Process
2009/5/19
We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of...
Spatially Modulated Photodetector in an Unmodified 0.13 µm CMOS-Process
CMOS-photodiode CMOS-OEICs optical
2010/7/15
Photodetectors fabricated in an unmodified,commercially available CMOS-process are reported. The detector comprises an immediate and a shaded n-well to p-substrate photodiode. S-parameter measurements...