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Seunghyun Lee, Kyunghoon Lee, Zhaohui Zhong Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
Graphene, bilayer chemical vapor deposition wafer scale bandgap opening
2010/11/24
The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bi...
Single-crystal Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
Single-crystal Grains Grain Boundaries Chemical Vapor Deposition
2010/11/25
Graphene has attracted enormous attention due to its numerous remarkable properties and wide range of potential applications. To fully realize its potential, graphene needs to be synthesized in large ...
Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
Raman optical characterization chemical vapor deposition
2010/11/19
We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition
(CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper,
optical contra...
FeSe film was prepared on GaAs 001 substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tet...
Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System
Substrate Effect Plasma Clean Efficiency Plasma Chemical Vapor Deposition System
2010/12/6
The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD) system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable...
Crystal quality and electrical properties of p-type GaN thin film on Si(111) substrate by metal-organic chemical vapor deposition MOCVD
Mechanical properties p-GaN Strain
2010/2/10
Purpose: In this paper, p-GaN samples have been grown on silicon substrates under various processing conditions. The effects of growth tenperature and thermal annealing on the crystal quality and stra...
Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition
Hall sensors magnetoresistors InGaAs/InP heterostructures electronic transport geometric correction factor molecular beam epitaxy (MBE)
2011/4/27
In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric cor...
Thermochemical and Green Luminescence Analysis of Zinc Oxide Thin Films Grown on Sapphire by Chemical Vapor Deposition
Zinc oxide chemical vapor deposition thermochemical activation energy hydrogen annealing green emission
2010/4/12
This study has been carried out to detail an integral thermochemical analysis of the principal reaction in the production of zinc oxide (ZnO) thin films, including developing an analytical form of the...