搜索结果: 1-6 共查到“热学 a-Si:H”相关记录6条 . 查询时间(0.187 秒)
采用基于密度泛函理论的第一性原理方法，研究了压力作用下Mg2Si和Mg2Ge的结构、弹性和热力学性质。计算结果表明：0 GPa压力作用下两者的晶格参数与实验值以及其他理论值吻合较好，且相对晶格常数a/a0和晶胞体积V/V0均随压力的增大而减小；在0~25 GPa压力作用下，Mg2Si和Mg2Ge相体模量B、剪切模量G、杨氏模量E均随压力的增大而增大，材料的刚度和塑性均增强，当压力达到15 GPa时...
期刊信息
篇名
Thermodynamic assessment of the Si-N system
语种
英文
撰写或编译
撰写
作者
Xiaoyan Ma,Changrong Li*,Fuming Wang,Weijing Zhang
第一作者单位
University of Science and Technology Beijing
刊物名称
CALPHAD ━ Computer Cou...
期刊信息
篇名
Thermodynamic assessment of the Ti-Si-N system and the interfacial reaction analysis
语种
英文
撰写或编译
撰写
作者
Xiaoyan Ma,Changrong Li*,Weijing Zhang
第一作者单位
University of Science and Technology Beijin...
Photovoltaic Properties of n-(ZnS)X(CdTe)1-X/p-Si
Photovoltaic properties n-(ZnS)x(CdTe)1-x/p-Si Hetrojunction solar cells thermal evaporation technique efficiency ideality factor
2010/4/9
Hetrojunction solar cells n-(ZnS)x(CdTe)1-x/p-Si, with Al, In and Au as front grid contacts, have been fabricated by thermal evaporation technique. Their photovoltaic properties and the forward I-V ch...
Temperature Dependence of Galvanomagnetic Properties for Lightly Doped N-Type Si
Temperature Dependence Galvanomagnetic Properties Lightly Doped N-Type Si
2010/4/13
The temperature dependence of Hall and magnetoresistance effects in n-type Si having a resistivity of 1400 {W } cm at room temperature is studied in the temperature range of 210-320 K. The variation o...
The Determination of Thermal Annealing Effect on the DOS Profile of a-Si:H Film
Thermal Annealing Effect DOS Profile a-Si:H Film
2010/4/19
In this study the aim was to investigate the effect of thermal annealing on the density of states (DOS) of hydrogenated amorphous silicon (a-Si:H) by means of a Schottky structure. In order to realize...