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Ballistic transport in graphene suggests new type of electronic device（图）
graphene electronic device
2014/3/19
Using electrons more like photons could provide the foundation for a new type of electronic device that would capitalize on the ability of graphene to carry electrons with almost no resistance even at...
Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure
GaAs Delta-doping Hydrostatic pressure
2010/9/25
The calculation of the electronic energy levels of n-type d-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account speciall...
Electronic Structure of the n-Type Doped AgInO2 and CuAlO2 Delafossites: Similarities and Differences
Electronic Structure the n-Type Doped AgInO2 and CuAlO2 Delafossites Similarities and Differences
2010/10/21
We performed the first-principles band-structure calculations for a pure and a Cd-doped AgInO2 delafossite compound. The results are carefully analyzed and compared with the results obtained for a pur...