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Imaging Stacking Order in Few-Layer Graphene.
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
InAs0.9Sb0.1 MOCVD Two-step growth method
2011/12/15
InAs0.9Sb0.1 epilayers are grown on GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD). In order to relax compressive strain caused by lattice mismatch between InAs0.9Sb0.1 and G...
期刊信息
篇名
Fabrication and Characteristics of ZnS Nanocrystals/Polymer Composite Doped with Tetraaphenylbenzidine Single Layer Structure Light-Emitting Diode
语种
英文
撰写或编译
作者
杨毅等
第一作者单位
刊物名称
Appl.Phys.Lett...
Interaction between Cesium Chloride Molecules and Metal Atoms under Coadsorption on a Single Graphite Layer on Iridium
High-Tc superconductors K-doping critical current density resistive transition
2010/4/15
Using the method of continuos flow to investigate the kinetics of reaction between atoms and molecules, the efficiency of substitution reactions (K, Na, Li)+ CsCl is shown to decrease. The efficiency ...