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电感耦合等离子体CVD室温制备的纳米Si薄膜场电子发射研究
ICP-CVD 纳米Si锥 场电子发射 低温生长
2013/10/17
利用电感耦合等离子体化学气相沉积在室温下制备了Si薄膜，用拉曼谱对样品的结构进行了表征，502 cm-1附近散射峰的出现说明在样品中形成了纳米结晶相。用原子力显微镜观察样品表面形貌发现，在合适的等离子体条件下制备的样品，其表面由随机均匀排列的高密度Si锥组成，Si锥的高度为30~40 nm，直径约为200 nm。场电子发射测量结果显示样品具有良好的电子发射特性，开启电压为7~10 V/μm。
A Theoretical Study of Acrylonitrile Adsorption on Si(001)
A Theoretical Study Acrylonitrile Adsorption Si(001)
2010/10/22
The present work is a comparative study of possible adsorption structures of the conjugated molecule acrylonitrile on Si(001) employing the state of the art pseudopotential method, within a generalize...
Contribution of the Charge Image Potential to Carrier Confinement in Graded Si-Based Quantum Wells
the Charge Image Potential Carrier Confinement Graded Si-Based Quantum Wells
2010/10/22
In order to analyze the charging effects on electronic spectrum of Silicon (Si) based quantum wells (QW’s), we use a method based on the calculation of the image charge potential by solving Poisson eq...
A Study of Events From Si 28 With Emulsion at 4.5 A GeV/c Without Target Fragmentation
Multiplicity and angular distributions of projectile fragments
2010/4/19
Atotal sample of 1000 inelastic interactions of Si28 in emulsion at 4.5 A GeV/c has been used characteristics of projectile fragments. This paper is therefore to devoted to the study of projectile fra...