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Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral
Taylor Surface Potential MOSFET Pao-Sah Integral
2010/12/3
We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). ...
Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects
Surface potential Threshold voltage LDD nMOSFET Defects
2010/12/8
We propose a model of the surface potential and the threshold voltage for submicron lightly-doped drain LDD nMOSFET’s in relation with the localized defects at the interface Si–SiO2 in the overlap n&#...