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Band gap tuning in ferroelectric Bi4Ti3O12 by alloying LaTMO3 (TM = Ti, V, Cr, Mn, Co, Ni, and Al)
Band gap tuning ferroelectric Bi4Ti3O12 alloying LaTMO3
2012/2/24
We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. W...
Tm:YAP晶体生长及光谱特性研究
2007/12/13
摘要 采用提拉法生长了掺杂浓度分别为4、8与10at%的Tm:YAP晶体. 测定了Tm3+在YAP基质中的分凝系数为0.88. 采用同步辐射的方法研究了Tm:YAP晶体的生长条纹和结构应力缺陷. 晶体的吸收峰位于694和795nm; 荧光谱峰值在2.0μm附近, 因此Tm:YAP晶体有望成为一种新型的适合LD泵浦的中红外激光材料.